MOSFET (Metal Oxide) N-Channel Tube ±30V 900V TO-220-3 Full Pack
SOT-23
STF7N90K5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
17 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ K5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Base Part Number
STF7N
Power Dissipation-Max
110W Tc
FET Type
N-Channel
Vgs(th) (Max) @ Id
5V @ 100μA
Current - Continuous Drain (Id) @ 25°C
7A Tc
Drain to Source Voltage (Vdss)
900V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Drain to Source Resistance
720mOhm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.13000
$3.13
50
$2.52460
$126.23
100
$2.27210
$227.21
500
$1.76716
$883.58
STF7N90K5 Product Details
STF7N90K5 Overview
When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 720mOhm exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 900V.Using drive voltage (10V) reduces this device's overall power consumption.
STF7N90K5 Features
single MOSFETs transistor is 720mOhm a 900V drain to source voltage (Vdss)
STF7N90K5 Applications
There are a lot of STMicroelectronics STF7N90K5 applications of single MOSFETs transistors.
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