FDME1034CZT   Description

 The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.

FDME1034CZT   Features 

Q1: N?Channel

? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A

? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A

? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A

? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A

Q2: P?Channel

? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A

? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A

? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A

? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A

? Low Profile: 0.55 mm Maximum in the New Package MicroFET

1.6x1.6 Thin

? Free from Halogenated Compounds and Antimony Oxides

? HBM ESD Protection Level > 1600 V (Note 3)

? This Device is Pb?Free and is RoHS Compliant

FDME1034CZT    Applications

? DC?DC Conversion

? Level Shifted Load Switch