FDMS3604S Description

FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.

FDMS3604S Features

• Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

• Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

• Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A

• Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

• This Device is Pb?Free and is RoHS Compliant

FDMS3604S Applications

• Computing

• Communications

• General Purpose Point of Load

• Notebook VCORE