FDMS3669S

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Manufacturer part number:FDMS3669S

Manufacturer:ON Semiconductor

Description:FDMS3669S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS3669S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	171mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.5W
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	1W
FET Type	2 N-Channel (Dual) Asymmetrical
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A 18A
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	3ns
Fall Time (Typ)	3 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	55 pF
Height	1.1mm
Length	5mm
Width	5.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant