BUK7507-55B,127

new-10%

Manufacturer part number:BUK7507-55B,127

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 55V 75A TO220AB

Case Package:SOT-23

Datasheet:BUK7507-55B,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	203W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	203W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Rise Time	52ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	119A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain Current-Max (Abs) (ID)	75A
Drain-source On Resistance-Max	0.0071Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	478A
Radiation Hardening	No
RoHS Status	RoHS Compliant