NDB6060L MOSFET Description

ON Semiconductor's patented, high cell density, DMOS technology is used to manufacture this logic level N-Channel enhancement MOSFET NDB6060L. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The NDB6060L is ideal for low voltage applications such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, low in-line power loss, and transient resistance.

NDB6060L MOSFET Features

• 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V

• Low drive requirements allow operation directly from logic drivers

• 175°C maximum junction temperature rating

• The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor

• TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications

• Critical DC electrical parameters specified at elevated temperature

• High-density cell design for extremely low RDS(ON)

• VGS(TH) < 2.0V.

NDB6060L MOSFET Applications

• Battery Motor Control

• Secondary Side Synchronous

• Three-Phase Bridge for Brushless DC Motor Control

• Up to 12s Battery Power Tools

• Buck Converters

• Power Converters with Multi-Megahertz Operation

• Other Half and Full-Bridge Topologies

• Circuit Protection

• DC-DC Conversion

• General Power Conversion