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FDMS86300DC

FDMS86300DC

FDMS86300DC

ON Semiconductor

FDMS86300DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS86300DC Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 90mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Dual Cool™, PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7005pF @ 40V
Current - Continuous Drain (Id) @ 25°C 24A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs 101nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2.5V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 240 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3.3 V
Height 1.05mm
Length 5.1mm
Width 5.85mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.18800 $3.564
6,000 $1.14400 $6.864
FDMS86300DC Product Details

Description


The FDMS86300DC is a POWERTRENCH? MOSFET, N-Channel, DUAL COOL? 56 80 V, 110 A, 3.1 mΩ. This N-Channel MOSFET is created utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. With the lowest rDS(on) and the best switching performance, possible thanks to incredibly low Junction-to-Ambient thermal resistance, advancements in silicon and DUAL COOL? packaging technologies have been integrated.



Features


  • High Performance Technology for Extremely Low rDS(on)

  • 100% UIL Tested

  • RoHS Compliant

  • DUAL COOL Top Side Cooling PQFN package

  • Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A

  • Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A



Applications


  • Telecom Secondary Side Rectification

  • High-End Server/Workstation Vcore Low Side

  • Synchronous Rectifier for DC/DC Converters

  • Automotive Electronics

  • As for Switching Devices in Electronic Control Units


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