FDMS86300DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS86300DC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
90mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
Dual Cool™, PowerTrench®
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta 125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.2W
Case Connection
DRAIN
Turn On Delay Time
29 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.1m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7005pF @ 40V
Current - Continuous Drain (Id) @ 25°C
24A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs
101nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
24A
Threshold Voltage
2.5V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
60A
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
260A
Avalanche Energy Rating (Eas)
240 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3.3 V
Height
1.05mm
Length
5.1mm
Width
5.85mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMS86300DC Product Details
Description
The FDMS86300DC is a POWERTRENCH? MOSFET, N-Channel, DUAL COOL? 56 80 V, 110 A, 3.1 mΩ. This N-Channel MOSFET is created utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. With the lowest rDS(on) and the best switching performance, possible thanks to incredibly low Junction-to-Ambient thermal resistance, advancements in silicon and DUAL COOL? packaging technologies have been integrated.
Features
High Performance Technology for Extremely Low rDS(on)
100% UIL Tested
RoHS Compliant
DUAL COOL Top Side Cooling PQFN package
Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A
Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A
Applications
Telecom Secondary Side Rectification
High-End Server/Workstation Vcore Low Side
Synchronous Rectifier for DC/DC Converters
Automotive Electronics
As for Switching Devices in Electronic Control Units