FDMS86550

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FDMS86550

Manufacturer part number:FDMS86550

Manufacturer:ON Semiconductor

Description:FDMS86550 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86550 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	56.5mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.7W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	43 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.65m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11530pF @ 30V
Current - Continuous Drain (Id) @ 25°C	32A Ta 155A Tc
Gate Charge (Qg) (Max) @ Vgs	154nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	155A
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	32A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	937 mJ
Height	1.05mm
Length	5.1mm
Width	6.25mm
RoHS Status	ROHS3 Compliant