RUM001L02T2CL

new-10%

Manufacturer part number:RUM001L02T2CL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 20V 0.1A VMT3

Case Package:SOT-23

Datasheet:RUM001L02T2CL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels	1
Power Dissipation-Max	150mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	7.1pF @ 10V
Current - Continuous Drain (Id) @ 25°C	100mA Ta
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	4.2Ohm
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	550μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free