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NTD4856N-1G

NTD4856N-1G

NTD4856N-1G

ON Semiconductor

MOSFET N-CH 25V 13.3A IPAK

SOT-23

NTD4856N-1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.33W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.14W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2241pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 22.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 27.2 ns
Continuous Drain Current (ID) 16.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13.3A
Drain-source On Resistance-Max 0.0068Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 179A
Avalanche Energy Rating (Eas) 180.5 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.667101 $1.667101
10 $1.572737 $15.72737
100 $1.483714 $148.3714
500 $1.399730 $699.865
1000 $1.320500 $1320.5

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