NTD4856N-1G

new-10%

Manufacturer part number:NTD4856N-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 13.3A IPAK

Case Package:SOT-23

Datasheet:NTD4856N-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.33W Ta 60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.14W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2241pF @ 12V
Current - Continuous Drain (Id) @ 25°C	13.3A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 4.5V
Rise Time	22.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.5 ns
Turn-Off Delay Time	27.2 ns
Continuous Drain Current (ID)	16.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	13.3A
Drain-source On Resistance-Max	0.0068Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	179A
Avalanche Energy Rating (Eas)	180.5 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free