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FDN360P-NBGT003B

  • FDN360P-NBGT003B
  • FDN360P-NBGT003B

FDN360P-NBGT003B

FDN360P-NBGT003B

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 80m Ω @ 2A, 10V ±20V 298pF @ 15V 9nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

FDN360P-NBGT003B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 298pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
FDN360P-NBGT003B Product Details

FDN360P-NBGT003B Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 298pF @ 15V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

FDN360P-NBGT003B Features


a 30V drain to source voltage (Vdss)


FDN360P-NBGT003B Applications


There are a lot of ON Semiconductor
FDN360P-NBGT003B applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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