FDN8601 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN8601 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
1.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
4.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
109m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
210pF @ 50V
Current - Continuous Drain (Id) @ 25°C
2.7A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V
Rise Time
1.3ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.4 ns
Turn-Off Delay Time
7.8 ns
Continuous Drain Current (ID)
2.7A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Nominal Vgs
3 V
Feedback Cap-Max (Crss)
5 pF
Height
940μm
Length
1.4mm
Width
2.92mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.351797
$1.351797
10
$1.275280
$12.7528
100
$1.203094
$120.3094
500
$1.134995
$567.4975
1000
$1.070750
$1070.75
FDN8601 Product Details
FDN8601 Description
The FDN8601 is an N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDN8601 is suitable for primary DC-to-DC switch and load switch applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDN8601 is in the SSOT-3 package with 1.5W power dissipation.
FDN8601 Features
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 1.5 A
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 1.2 A
High-Performance Trench Technology for Extremely Low rDS(on)
High Power and Current Handling Capability in a Widely Used Surface Mount Package