IXFN130N30

new-10%

IXFN130N30

Manufacturer part number:IXFN130N30

Manufacturer:IXYS

Description:MOSFET N-CH 300V 130A SOT-227B

Case Package:SOT-23

Datasheet:IXFN130N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	22mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	300V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	130A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	14500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	75ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	130 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	130A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	520A
Dual Supply Voltage	300V
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free