FDP053N08B-F102

new-10%

Manufacturer part number:FDP053N08B-F102

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 80V 75A TO-220

Case Package:SOT-23

Datasheet:FDP053N08B-F102 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	146W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	146W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5960pF @ 40V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	75A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0053Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	365 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free