FDP15N65

new-10%

Manufacturer part number:FDP15N65

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 650V 15A TO-220

Case Package:SOT-23

Datasheet:FDP15N65 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	UniFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	250W Tc
Element Configuration	Single
Power Dissipation	250W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	440mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3095pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	125ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	105 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	650V
Input Capacitance	3.095nF
Drain to Source Resistance	440mOhm
Rds On Max	440 mΩ
RoHS Status	RoHS Compliant