FDP2532 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDP2532 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
16MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Current Rating
79A
Number of Elements
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs
107nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
79A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
150V
Avalanche Energy Rating (Eas)
400 mJ
Recovery Time
105 ns
Height
9.4mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.95000
$3.95
10
$3.54300
$35.43
100
$2.92610
$292.61
800
$2.17118
$1736.944
FDP2532 Product Details
FDP2532 Description
The FDP2532 is a PowerTrench? N-channel MOSFET suitable for synchronous rectification, battery protection circuit, uninterruptible power supplies and micro solar inverter. The general purpose MOSFET portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs as well as products for smaller power handling (single and dual N- and P-channel MOSFETs).
FDP2532 Features
RDS(on) = 14 mΩ ( Typ.) @VGS = 10 V, lD = 33 A
QG(tot) = 82 nC ( Typ.) @ VGS = 10 V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)