FDP4020P

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Manufacturer part number:FDP4020P

Manufacturer:ON Semiconductor

Description:FDP4020P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP4020P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-65°C~175°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	37.5W Tc
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	80mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	665pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V

Quantity	Unit Price	Ext. Price
1	$1.927051	$1.927051
10	$1.817973	$18.17973
100	$1.715069	$171.5069
500	$1.617990	$808.995
1000	$1.526405	$1526.405

FDP4020P Description

FDP4020P is a 2.5v P-Channel Specified Enhancement Mode Field Effect Transistor. This P-Channel low threshold MOSFET FDP4020P has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management. The part may also be used in conjunction with DC-DC converters requiring P-Channel.

FDP4020P Features

-16 A, -20 V. RDS(on) = [email protected] VGS = -4.5 V

RDS(on) = [email protected] VGS = -2.5 V.

Critically DC electrical parameters are specified at elevated temperatures.
High-density cell design for extremely low RDS(on)
T0-220 and TO-263 (D2PAK) package for both through-hole and surface mount applications.
175℃ maximum junction temperature rating