FDPC8012S

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Manufacturer part number:FDPC8012S

Manufacturer:ON Semiconductor

Description:FDPC8012S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDPC8012S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	192mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	2W
Number of Elements	2
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	800mW 900mW
FET Type	2 N-Channel (Dual) Asymmetrical
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1075pF @ 13V
Current - Continuous Drain (Id) @ 25°C	13A 26A
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	3ns
Fall Time (Typ)	3 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	88A
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.007Ohm
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	725μm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant