FDPF2D3N10C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDPF2D3N10C Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Weight
2.27g
Operating Temperature
-55°C~175°C TJ
Series
PowerTrench®
Pbfree Code
yes
Part Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
45W Tc
Element Configuration
Single
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds
11180pF @ 50V
Current - Continuous Drain (Id) @ 25°C
222A Tc
Gate Charge (Qg) (Max) @ Vgs
152nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDPF2D3N10C Product Details
FDPF2D3N10C Description
The FDPF2D3N10C is a single channel MV MOSFET with a voltage of 100V from ON Semiconductor. FDPF2D3N10C operates between -55°C and 175°C, with a maximum power dissipation of 45W Tc. The TO-220-3 Full Pack packaging method is available. Onsemi's innovative POWERTRENCH process utilizes Shielded Gate technology to generate this channel MV MOSFET. With the best-in-class soft body diode, this method has been designed to minimize on-state resistance while maintaining exceptional switching performance.
FDPF2D3N10C Features
Max rDS(on) = 2.3 m at VGS = 10 V, ID = 100 A
Extremely Low Reverse Recovery Charge, Qrr
100% UIL Tested
RoHS Compliant
FDPF2D3N10C Applications
Synchronous Rectification for ATX / Server / Telecom PSU