FDS3890

new-10%

Manufacturer part number:FDS3890

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R

Case Package:SOT-23

Datasheet:FDS3890 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	44MOhm
Terminal Finish	TIN
Subcategory	FET General Purpose Power
Voltage - Rated DC	80V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4.7A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	2
Voltage	80V
Current	47A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	11 ns
Power - Max	900mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1180pF @ 40V
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	8ns
Fall Time (Typ)	12 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	4.7A
Threshold Voltage	2.3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Avalanche Energy Rating (Eas)	175 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.575mm
Length	4.9mm
Width	3.9mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free