QH8JA1TCR

new-10%

Manufacturer part number:QH8JA1TCR

Manufacturer:ROHM Semiconductor

Description:20V PCH+PCH MIDDLE POWER MOSFET,

Case Package:SOT-23

Datasheet:QH8JA1TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.5W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A
Gate Charge (Qg) (Max) @ Vgs	10.2nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.048Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	8.9 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant