FDS4435A

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Manufacturer part number:FDS4435A

Manufacturer:ON Semiconductor

Description:FDS4435A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS4435A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	PowerTrench®
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	17mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-9A
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-1.7 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free