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FQD16N25CTM

  • FQD16N25CTM
  • FQD16N25CTM

FQD16N25CTM

FQD16N25CTM

ON Semiconductor

FQD16N25CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQD16N25CTM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 270mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 16A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 53.5nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 105 ns
Turn-Off Delay Time 135 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 64A
Nominal Vgs 4 V
Height 2.3mm
Length 6.6mm
Width 6.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.031130 $2.03113
10 $1.916160 $19.1616
100 $1.807698 $180.7698
500 $1.705376 $852.688
1000 $1.608845 $1608.845
FQD16N25CTM Product Details

FQD16N25CTM Description


The FQD16N25CTM is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET FQD16N25CTM has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. The onsemi FQD16N25CTM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQD16N25CTM Features


  • 16A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A

  • Low gate charge ( Typ. 41nC)

  • Low Crss ( Typ. 68pF)

  • 100% avalanche testedcapability



FQD16N25CTM Applications


  • LCD TV

  • PDP TV

  • LED TV

  • Electronic lamp ballasts

  • Active power factor correction (PFC)


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