IRF9952TRPBF

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IRF9952TRPBF

Manufacturer part number:IRF9952TRPBF

Manufacturer:Infineon Technologies

Description:IRF9952TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF9952TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	100mOhm
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	2W
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3.5A
Base Part Number	IRF9952PBF
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.5A 2.3A
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	14ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	3.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	16A
Avalanche Energy Rating (Eas)	44 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free