FDC6327C           Description

  These Nipp channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.

FDC6327C          Features

N-Channel

?2.7A, 20V

?RDS(on) = 0.08|? @ VGS = 4.5V

?RDS(on) = 0.12|? @ VGS = 2.5V

P-Channel

?-1.6A, -20V

?RDS(on) = 0.17|? @ VGS = -4.5V

?RDS(on) = 0.25|? @ VGS = -2.5V

Fast switching speed.

Low gate charge.

High performance trench technology for extremelylow RDS(ON) .

SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

FDC6327C          Applications

This product is general usage and suitable for many different applications.