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FDS6630A

  • FDS6630A
  • FDS6630A

FDS6630A

FDS6630A

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 38m Ω @ 6.5A, 10V ±20V 460pF @ 15V 7nC @ 5V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDS6630A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 38mOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.5A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.7 V
Height 1.575mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.24467 $0.48934
5,000 $0.22888 $1.1444
12,500 $0.21310 $2.5572
25,000 $0.20205 $5.05125
FDS6630A Product Details

FDS6630A Description


In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.



FDS6630A Features


  • 6.5 A, 30 V

  • RDS(on) = 0.038 Ω@ VGS = 10 V

  • RDS(on) = 0.053 Ω @ VGS = 4.5 V

  • Low gate charge (5nC typical)

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6630A Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC Converters

  • Load Switch

  • Motor Drives


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