BSS306NH6327XTSA1

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BSS306NH6327XTSA1

Manufacturer part number:BSS306NH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS306NH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS306NH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT23
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	4.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	57m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	2V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	275pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 5V
Rise Time	2.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	8.3 ns
Continuous Drain Current (ID)	2.3A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.057Ohm
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free