STP40NF03L

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Manufacturer part number:STP40NF03L

Manufacturer:STMicroelectronics

Description:STP40NF03L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP40NF03L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	22mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	40A
Base Part Number	STP40N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	80ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	1.7V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	160A
Avalanche Energy Rating (Eas)	250 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free