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FDS6680S

FDS6680S

FDS6680S

ON Semiconductor

FDS6680S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS6680S Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 11MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.48000 $0.48
500 $0.4752 $237.6
1000 $0.4704 $470.4
1500 $0.4656 $698.4
2000 $0.4608 $921.6
2500 $0.456 $1140
FDS6680S Product Details

FDS6680S Description


FDS6680S is a type of N-channel logic-level PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is specifically designed to improve the overall efficiency of DC-DC converters through either synchronous or conventional switching PWM controllers. It features a low gate charge, fast switching speed, as well as high current and power handling capability. 



FDS6680S Features


  • Low RDS (on)

  • Low gate charge

  • Fast switching speed

  • Available in the SO-8 package

  • High power and current handling capability



FDS6680S Applications


  • DC-DC converters


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