FDS6680S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDS6680S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
11MOhm
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
11m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11.5A Ta
Gate Charge (Qg) (Max) @ Vgs
24nC @ 5V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
11.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.48000
$0.48
500
$0.4752
$237.6
1000
$0.4704
$470.4
1500
$0.4656
$698.4
2000
$0.4608
$921.6
2500
$0.456
$1140
FDS6680S Product Details
FDS6680S Description
FDS6680S is a type of N-channel logic-level PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It is specifically designed to improve the overall efficiency of DC-DC converters through either synchronous or conventional switching PWM controllers. It features a low gate charge, fast switching speed, as well as high current and power handling capability.