SI1022R-T1-GE3

new-10%

Manufacturer part number:SI1022R-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 330mA 250mW 1.25ohm @ 10V

Case Package:SOT-23

Datasheet:SI1022R-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3Ohm
Additional Feature	LOW THRESHOLD
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.25 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 25V
Current - Continuous Drain (Id) @ 25°C	330mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	330mA
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	60V
Height	700μm
Length	1.58mm
Width	760μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free