SUD19N20-90-E3

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SUD19N20-90-E3

Manufacturer part number:SUD19N20-90-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 19A DPAK

Case Package:SOT-23

Datasheet:SUD19N20-90-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	90mOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Voltage	200V
Power Dissipation-Max	3W Ta 136W Tc
Element Configuration	Single
Current	19A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Nominal Vgs	4 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free