FDS6688 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDS6688 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SOIC
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3888pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16A Ta
Gate Charge (Qg) (Max) @ Vgs
56nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.687634
$0.687634
10
$0.648711
$6.48711
100
$0.611992
$61.1992
500
$0.577350
$288.675
1000
$0.544670
$544.67
FDS6688 Product Details
FDS6688 Description
The FDS6688 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDS6688 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDS6688 Features
16A, 30V RDS(ON) = 6mΩ, @VGS = 10V
RDS(ON) = 7mΩ, @VGS = 4.5V
Ultra-low gate charge (40 nC typical)
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6688 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator