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FDS6688

FDS6688

FDS6688

ON Semiconductor

FDS6688 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS6688 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3888pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.687634 $0.687634
10 $0.648711 $6.48711
100 $0.611992 $61.1992
500 $0.577350 $288.675
1000 $0.544670 $544.67
FDS6688 Product Details

FDS6688 Description


The FDS6688 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDS6688 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.



FDS6688 Features


  • 16A, 30V RDS(ON) = 6mΩ, @VGS = 10V

                     RDS(ON) = 7mΩ, @VGS = 4.5V

  • Ultra-low gate charge (40 nC typical) 

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6688 Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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