FDS6898A   Description

   These N-channel logic level MOSFET are manufactured using on Semiconductor's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.

FDS6898A    Features

· 9.4 A, 20 V RDS(ON) = 14 mW @ VGS = 4.5 V

RDS(ON) = 18 mW @ VGS = 2.5 V

· Low gate charge (16 nC typical)

· High performance trench technology for extremely

low RDS(ON)

· High power and current handling capability

FDS6898A    Applications

This product is general usage and suitable for many different applications.