FDS6898AZ

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FDS6898AZ

Manufacturer part number:FDS6898AZ

Manufacturer:ON Semiconductor

Description:FDS6898AZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS6898AZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	14MOhm
Additional Feature	ESD PROTECTED
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	9.4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	10 ns
Power - Max	900mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1821pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 4.5V
Rise Time	15ns
Fall Time (Typ)	16 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	9.4A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Height	1.5mm
Length	5mm
Width	4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free