DMN2005DLP4K-7

new-10%

Manufacturer part number:DMN2005DLP4K-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 0.3A 6-DFN

Case Package:SOT-23

Datasheet:DMN2005DLP4K-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Powers
Max Power Dissipation	400mW
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN2005DLP4K
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id	900mV @ 100μA
Drain to Source Voltage (Vdss)	20V
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	3.5Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	350μm
Length	1.3mm
Width	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free