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SSM6N58NU,LF

SSM6N58NU,LF

SSM6N58NU,LF

Toshiba Semiconductor and Storage

MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1

SOT-23

SSM6N58NU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Number of Channels 2
Element Configuration Dual
Turn On Delay Time 26 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 84m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 129pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 1V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate, 1.8V Drive
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.073545 $0.073545
500 $0.054077 $27.0385
1000 $0.045064 $45.064
2000 $0.041343 $82.686
5000 $0.038639 $193.195
10000 $0.035943 $359.43
15000 $0.034761 $521.415
50000 $0.034180 $1709

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