FDS86141

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Manufacturer part number:FDS86141

Manufacturer:ON Semiconductor

Description:FDS86141 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS86141 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Turn On Delay Time	8.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	934pF @ 50V
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	16.5nC @ 10V
Rise Time	3.2ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.2 ns
Turn-Off Delay Time	14.3 ns
Continuous Drain Current (ID)	7A
Threshold Voltage	3.1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.023Ohm
Drain to Source Breakdown Voltage	100V
Nominal Vgs	3.1 V
Height	1.5mm
Length	4mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free