FDV305N

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Manufacturer part number:FDV305N

Manufacturer:ON Semiconductor

Description:FDV305N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDV305N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 17 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	220MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	900mA
Number of Elements	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	109pF @ 10V
Current - Continuous Drain (Id) @ 25°C	900mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	900mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.9A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Height	930μm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free