CSD13381F4T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.1A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7A.A turn-on delay time of 3.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 850mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
CSD13381F4T Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 7A.
a threshold voltage of 850mV
CSD13381F4T Applications
There are a lot of Texas Instruments
CSD13381F4T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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