FQU2N50BTU

new-10%

Manufacturer part number:FQU2N50BTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 1.6A IPAK

Case Package:SOT-23

Datasheet:FQU2N50BTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 30W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.3 Ω @ 800mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.6A Tc
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	1.6A
Pulsed Drain Current-Max (IDM)	6.4A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	120 mJ