NTLJD3115PT1G

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Manufacturer part number:NTLJD3115PT1G

Manufacturer:ON Semiconductor

Description:NTLJD3115PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTLJD3115PT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	100MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	710mW
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	-4.1A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTLJD3115P
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	531pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Rise Time	15ns
Fall Time (Typ)	15 ns
Turn-Off Delay Time	19.8 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	2mm
Width	2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free