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TPD3215M

  • TPD3215M
  • TPD3215M

TPD3215M

TPD3215M

Transphorm

GANFET 2N-CH 600V 70A MODULE

SOT-23

TPD3215M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case Module
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Power - Max 470W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 34m Ω @ 30A, 8V
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
Drain to Source Voltage (Vdss) 600V
FET Feature GaNFET (Gallium Nitride)
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $178.83000 $178.83
10 $172.66200 $1726.62

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