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FDZ197PZ

FDZ197PZ

FDZ197PZ

ON Semiconductor

FDZ197PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDZ197PZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, WLCSP
Number of Pins 6
Weight 54mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Turn On Delay Time 5.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 64m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 5.9ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 280 ns
Turn-Off Delay Time 311 ns
Continuous Drain Current (ID) -3.8A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -500 mV
Feedback Cap-Max (Crss) 225 pF
Height 650μm
Length 1mm
Width 1.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.23000 $0.23
500 $0.2277 $113.85
1000 $0.2254 $225.4
1500 $0.2231 $334.65
2000 $0.2208 $441.6
2500 $0.2185 $546.25
FDZ197PZ Product Details

FDZ197PZ Description


The FDZ197PZ lowers both PCB space and rDS by combining an innovative 1.5 V PowerTrench? technique with a state-of-the-art "fine pitch" WLCSP packaging process (on). This sophisticated WLCSP MOSFET represents a technological breakthrough in packaging, allowing it to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS (on).



FDZ197PZ Features


  • Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A

  • Max rDS(on) = 71 mmΩ at VGS = -2.5 V, ID= -2.0 A

  • Max rDS(on) = 79 mmΩ at VGS = -1.8 V, ID = -1.0 A

  • Max rDS(on) = 95 mmΩ at VGS = -1.5 V, ID = -1.0 A

  • Occupies only 1.5 mm2 of PCB area. Less than 50% of thearea of 2 x 2 BGA

  • Ultra-thin package: less than 0.65 mm height when mountedto PCB

  • HBM ESD protection level > 4.4 kV (Note 3)

  • RoHS Compliant



FDZ197PZ Applications


  • This product is general usage and suitable for many different applications.

  • Battery Management

  • Load Switch

  • Battery Protection


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