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STW36N60M6

  • STW36N60M6
  • STW36N60M6

STW36N60M6

STW36N60M6

STMicroelectronics

MOSFET (Metal Oxide) N-Channel 99m Ω @ 15A, 10V ±25V 1960pF @ 100V 44.3nC @ 10V 600V TO-247-3

SOT-23

STW36N60M6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Series MDmesh™ M6
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Base Part Number STW36N
Power Dissipation-Max 208W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 99m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 100V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 44.3nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.30000 $6.3
30 $5.13000 $153.9
120 $4.70667 $564.8004
510 $3.88080 $1979.208
1,020 $3.33025 $3.33025
2,520 $3.18202 $6.36404
STW36N60M6 Product Details

STW36N60M6 Description


STW36N60M6 is a type of power MOSFET provided by ON Semiconductor based on the new MDmesh? M6 technology. It is built on the previous generation of MDmesh devices through its new M6 technology for excellent RDS (on) area improvement and effective switching behaviors. 



STW36N60M6 Features


  • Low RDS (on)

  • Low gate input resistance

  • Reduced switching losses

  • 100% avalanche tested

  • Available in the TO-247 package



STW36N60M6 Application


  • Switching applications


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