RW1C026ZPT2CR

new-10%

Manufacturer part number:RW1C026ZPT2CR

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 70m Ω @ 2.5A, 4.5V ±10V 1250pF @ 10V 10nC @ 4.5V 20V SOT-563, SOT-666

Case Package:SOT-23

Datasheet:RW1C026ZPT2CR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±10V
Continuous Drain Current (ID)	2.5A
Drain-source On Resistance-Max	0.07Ohm
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant