FGA25N120ANTDTU-F109

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Manufacturer part number:FGA25N120ANTDTU-F109

Manufacturer:ON Semiconductor

Description:FGA25N120ANTDTU-F109 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA25N120ANTDTU-F109 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	312W
Base Part Number	FGA25N120A
Rise Time-Max	90ns
Element Configuration	Single
Input Type	Standard
Power - Max	312W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Reverse Recovery Time	350 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 50A
IGBT Type	NPT and Trench
Gate Charge	200nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	50ns/190ns
Switching Energy	4.1mJ (on), 960μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
Fall Time-Max (tf)	180ns
Height	18.9mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant