STGW40NC60V

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Manufacturer part number:STGW40NC60V

Manufacturer:STMicroelectronics

Description:STGW40NC60V datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW40NC60V Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	260W
Current Rating	50A
Base Part Number	STGW40
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	260W
Input Type	Standard
Turn On Delay Time	43 ns
Transistor Application	POWER CONTROL
Rise Time	17ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	170 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	61 ns
Test Condition	390V, 40A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	247 ns
Gate Charge	214nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	43ns/140ns
Switching Energy	330μJ (on), 720μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free