HGTD3N60C3S9A

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Manufacturer part number:HGTD3N60C3S9A

Manufacturer:ON Semiconductor

Description:HGTD3N60C3S9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTD3N60C3S9A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Max Power Dissipation	33W
Current Rating	6A
Element Configuration	Single
Power Dissipation	33W
Input Type	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	6A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.65V
Test Condition	480V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 3A
Gate Charge	10.8nC
Current - Collector Pulsed (Icm)	24A
Switching Energy	85μJ (on), 245μJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$0.40000	$0.4
500	$0.396	$198
1000	$0.392	$392
1500	$0.388	$582
2000	$0.384	$768
2500	$0.38	$950

HGTD3N60C3S9A Description

High voltage switching devices with MOS gates, the HGTD3N60C3S and HGTP3N60C3, combine the finest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly. The IGBT is perfect for a variety of high voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as power supplies, drivers for solenoids, relays, and contactors, as well as AC and DC motor controllers.