FGA30N65SMD

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Manufacturer part number:FGA30N65SMD

Manufacturer:ON Semiconductor

Description:FGA30N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA30N65SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	60A
Reverse Recovery Time	35ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.29V
Turn On Time	41 ns
Test Condition	400V, 30A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	125 ns
IGBT Type	Field Stop
Gate Charge	87nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	14ns/102ns
Switching Energy	716μJ (on), 208μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	20.1mm
Length	16.2mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant