STGWT80H65DFB

new-10%

Manufacturer part number:STGWT80H65DFB

Manufacturer:STMicroelectronics

Description:IGBT 650V 120A 469W TO3P-3L

Case Package:SOT-23

Datasheet:STGWT80H65DFB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.756003g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	469W
Base Part Number	STGWT80
Element Configuration	Single
Input Type	Standard
Power - Max	469W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	120A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.6V
Test Condition	400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 80A
IGBT Type	Trench Field Stop
Gate Charge	414nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	84ns/280ns
Switching Energy	2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max	20V
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free